收藏本站
Si840x
Table 5. Electrical Characteristics for All I 2 C and Non-I 2 C Channels
3.0 V < VDD < 5.5 V. TA = –40 to +125 °C. Typical specs at 25 °C
Parameter
VDD Undervoltage Threshold
VDD Negative-going Lockout
Symbol
VDDUV+
VDDH–
Test Condition
AVDD, BVDD rising
AVDD, BVDD falling
Min
2.15
45
Typ
2.3
75
Max
2.5
95
Unit
V
mV
Hysteresis
Common Mode Transient
Immunity
Shut Down Time from UVLO
Start-up Time *
CMTI
t SD
t START
V I = V DD or 0 V
—
—
—
25
3.0
15
—
—
40
kV/μs
μs
μs
*Note: Start-up time is the time period from the application of power to valid data at the output.
1.4 V
Typical
Input
Typical
Output
1.4 V
t PLH
90%
10%
t r
90%
10%
t PHL
t f
Figure 1. Propagation Delay Timing (Non-I 2 C Channels)
1.1. Test Circuits
Figure 2 depicts the timing test diagram.
AVDD
BVDD
R 1
R 1
NC
NC
R 2
R 2
ASDA
ADIN
ADOUT
ASCL
BSDA
BDOUT
BDIN
BSCL
C 1
C 1
C 3
NC NC
AGND BGND
C 3
C 2
C 2
Si840x
Figure 2. Simplified Timing Test Diagram
8
Rev. 1.6
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI8405AB-A-IS1 IC ISOLATOR 10M 6CH 2.5K 16SOIC
SI8423BD-B-IS ISOLATOR 2CH 5KV 150M 16SOIC
SI8435BB-C-IS1 IC ISOLATOR DGTL 3CH 16SOIC
SI8442BB-C-IS1 IC ISOLATOR DGTL 4CH 16SOIC
SI8451BB-A-IS1 IC ISOLATOR DGTL 5CH 16SOIC
SI8460BB-A-IS1 IC ISOLATOR DGTL 6CH 16SOIC
SI8606AC-B-IS1 IC ISOLATOR BIDIR 3.75KV 16SOIC
SI8621ED-B-IS IC ISOLATOR 2CH 5KV 16-SOIC
相关代理商/技术参数
SI8402AB-B-ISR 制造商:Silicon Laboratories Inc 功能描述:2.5 KV BIDIRECTIONAL I2C ISOLATOR, UNI CLK, 1.7MHZ, SOIC8, L - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:IC I2C ISOLATOR BIDIR 8-SOIC 制造商:Silicon Laboratories Inc 功能描述:2.5 KV BIDIRECTIONAL I2C ISOLATOR 1.7MHz
SI8402DB 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:20-V N-Channel 1.8-V (G-S) MOSFET
SI8402DB_06 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:20-V N-Channel 1.8-V (G-S) MOSFET
SI8402DB_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:20-V N-Channel 1.8-V (G-S) MOSFET
SI8402DB-T1 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:20-V N-Channel 1.8-V (G-S) MOSFET
SI8402DB-T1-E1 功能描述:MOSFET 20V 6.8A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI8402DB-T1-E3 制造商:Vishay Semiconductors 功能描述:
SI-8402L 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Separate Excitation Switching Type with Coil